N-Channel MOSFET
June 1998
FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of N-C...
Description
June 1998
FDR4420A Single N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where small package size is required without compromising power handling and fast switching.
Features
11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V, RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a standard SO-8. Low profile package(1mm thick). Power handling capability similar to SO-8.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D D S
S
5
4 3 2 1
44
20
A
G
6 7 8
pin 1
SuperSOT TM-8
D
D
D
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation
TA = 25oC unless otherwise noted FDR4420A 30 ±20
(Note 1a)
Units V V A
11 40
(Note 1a) (Note 1b) (Note 1c)
1.8 1 0.9 -55 to 150
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (...
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