FDP6670AL

July 1998 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. _________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (Note 1) (Note 1) T C = 25°C unless otherwise noted FDP6670AL 30 ±20 80 240 75 0.5 -65 to 175 275 FDB6670AL Units V V A W W/°C °C °C THERMAL CHARACTERISTICS RθJC RθJ...