N-Channel MOSFET
FDP16AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
FDP16AN08A0
N-Channel PowerTrench® MOSFET
75 V, 58 A, 16 mΩ
...
Description
FDP16AN08A0 — N-Channel PowerTrench® MOSFET
October 2013
FDP16AN08A0
N-Channel PowerTrench® MOSFET
75 V, 58 A, 16 mΩ
Features
Applications
RDS(on) = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A QG(tot) = 28 nC ( Typ.) @ VGS = 10 V Low Miller Charge
Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies
Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82660
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
ID
EAS PD TJ, TSTG
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC Operating and Storage Temperature
Thermal Characteristics
RθJC RθJA
Thermal Resistance Junction to Case, Max. Thermal Resistance Junction to Ambient (Note 2), Max.
S
FDP16AN08A0
75 ±20
58 44 9 Figure 4 117 135 0.9 -55 to 175
Unit
V V
A
A A mJ W W/oC oC
1.11 62
oC/W oC/W
©2002 Fairchild Semiconductor Corporation
1
FDP16AN08A0 Rev. C2
www.fairchildsemi.com
FDP16AN08A0 — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking FDP16AN08A0
Device FDP16AN08A0
Package TO-220
Reel Size Tube
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 2...
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