60V N-Channel MOSFET
FDN5630
March 2000
FDN5630
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been design...
Description
FDN5630
March 2000
FDN5630
60V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.
Features
1.7 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V RDS(ON) = 0.120 Ω @ VGS = 6 V. Optimized for use in high frequency DC/DC converters. Low gate charge. Very fast switching. SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint.
Applications
DC/DC converter Motor drives
D
D
S
SuperSOT -3
TM
G
TA = 25 C unless otherwise noted
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
60 ±20
(Note 1a)
Units
V V A W °C
1.7 10 0.5 0.46 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
250 75
°C/W °C/W
Package Marking and Ordering Information
Device Marking
5630
Device
FDN5630
Reel Size
7
Tape Width
8mm
Quantity
3000 units
2000 Fairchild Semiconducto...
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