FDN371N

FDN371N September 2001 FDN371N 20V N-Channel PowerTrench® MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Features 2.5 A, 20 V. RDS(ON) = 50 mΩ @ VGS = 4.5 V RDS(ON) = 60 mΩ @ VGS = 2.5 V Applications Load switch Battery protection Power management Low gate charge (7.6 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) D D S G S SuperSOT -3 TM G TA=25 C unless otherwise noted o Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ± 12 (Note 1a) Units V V A W °C 2.5 10 0.5 0.46 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W Package Marking and Ordering Information Device Marking 371 Device FDN371N Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDN371N Rev C (W) FDN371N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leaka...