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FDN308P

P-Channel MOSFET

Description

FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –20 V, –1.5 A. RDS(ON) = 125 mΩ ...

Fairchild Semiconductor

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