FDN304P

FDN304P January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection Features –2.4 A, –20 V. RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S SuperSOTTM-3 G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 304P FDN304P 7’’ GS Ratings –20 ±8 –2.4 –10 0.5 0.46 –55 to +150 250 75 Tape width 8mm Units V V A W °C °C/W °C/W Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDN304P Rev C(W) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Charact...