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FDI3652
N-Channel MOSFET
Description
FDB3652 / FDP3652 / FDI3652 October 2002 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench® MOSFET 100V, 61A, 16mΩ Features r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82769 ...
Fairchild Semiconductor
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