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FDH44N50

Fairchild Semiconductor

N-Channel SMPS Power MOSFET

FDH44N50 — N-Channel SMPS Power MOSFET FDH44N50 N-Channel SMPS Power MOSFET 500 V, 44 A, 120 mΩ December 2013 Feature...


Fairchild Semiconductor

FDH44N50

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FDH44N50 — N-Channel SMPS Power MOSFET FDH44N50 N-Channel SMPS Power MOSFET 500 V, 44 A, 120 mΩ December 2013 Features Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC) Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced RDS(on) (110 mΩ (Typ.) @ VGS = 10 V, ID = 22 A) Reduced Miller Capacitance and Low Input Capacitance (Typ. Crss = 40 pF) Improved Switching Speed with Low EMI 175oC Rated Junction Temperature Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10 V) Continuous (TC = 100oC, VGS = 10 V) Pulsed1 Power Dissipation Derate Above 25oC Operating and Storage Temperature Soldering Temperature for 10 Seconds Mounting Torque, 8-32 or M3 Screw FDH44N50 500 ±30 44 32 176 750 5 -55 to 175 300 (1.6mm from case) 10ibf*in (1.1N*m) Thermal Characterist...




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