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FDG6332C

Fairchild Semiconductor
Part Number FDG6332C
Manufacturer Fairchild Semiconductor
Description 20V N&P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs ...
Datasheet PDF File FDG6332C PDF File

FDG6332C
FDG6332C

Overview
FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features • Q1 0.
7 A, 20V.
RDS(ON) = 300 mΩ @ VGS = 4.
5 V RDS(ON) = 400 mΩ @ VGS = 2.
5 V • Q2 –0.
6 A, –20V.
RDS(ON) = 420 mΩ @ VGS = –4.
5 V RDS(ON) = 630 mΩ @ VGS = –2.
5 V • Low gate charge • High pe...


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