DatasheetsPDF.com

FDG6322C

Fairchild Semiconductor
Part Number FDG6322C
Manufacturer Fairchild Semiconductor
Description Dual N & P Channel Digital FET
Published Mar 30, 2005
Detailed Description February 1998 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancem...
Datasheet PDF File FDG6322C PDF File

FDG6322C
FDG6322C

Overview
February 1998 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features N-Ch 0.
22 A, 25 V, RDS(ON) = 4.
0 Ω @ VGS= 4.
5 V, RDS(ON) = 5.
0 Ω @ VGS= 2.
7...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)