FDG330P

FDG330P December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.8 V Applications Battery management Load switch Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package D D S 1 6 2 5 Pin 1 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1a) Units V V A W °C –2 –6 0.75 0.48 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .30 Device FDG330P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDG330P Rev D (W) FDG330P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Dr...