FDG315N

FDG315N July 2000 FDG315N N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications DC/DC converter Load switch Power Management D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 30 ±20 2 6 0.75 0.48 -55 to +150 Units V V A W °C (Note 1a) Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W Package Marking and Ordering Information Device Marking .15 Device FDG315N Reel Size 7’’ Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor International FDG315N Rev. C FDG315N Electrical Characteristics Symbol BVDSS ∆BVDS...