30V N-Channel PowerTrench MOSFET
FDD6692/FDU6692
April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET...
Description
FDD6692/FDU6692
April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
Low gate charge (18 nC typical) Fast switching
Applications
DC/DC converter Motor drives
High performance trench technology for extremely low RDS(ON)
D
D G S
I-PAK (TO-251AA) G D S
G
D-PAK TO-252 (TO-252)
S
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
30 ±16
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
54 162 57 3.8 1.6 -55 to +175
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.6 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75
2001 Fairchild Semiconductor Corporation
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