FDD6692

FDD6692/FDU6692 April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V Low gate charge (18 nC typical) Fast switching Applications DC/DC converter Motor drives High performance trench technology for extremely low RDS(ON) D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±16 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 54 162 57 3.8 1.6 -55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.6 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 2001 Fairchild Semiconductor Corporation ...