FDD6688

FDD6688/FDU6688 March 2015 FDD6688/FDU6688 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications DC/DC converter Motor Drives Features 84 A, 30 V. RDS(ON) = 5 mΩ @ VGS = 10 V RDS(ON) = 6 mΩ @ VGS = 4.5 V Low gate charge Fast switching High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbo l VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ±20 84 100 83 3.8 1.6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6688 FDD6688 D-PAK (TO-252) 13’’ FDU6688 FDU6688 I-PAK (TO-251) Tube Tape width 16mm N/A Units V A W °C °C/W Quantity 2500 units 75 ©2004 Fairchild Semiconductor Corporation FDD6688/FDU6688 Rev. 6.1 FDD6688/FDU6688 Electrical C...