FDD6680A

FDD6680A February 2000 FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.0130 Ω @ VGS = 4.5 V. Low gate charge ( 23nC typical ). Fast switching speed. High performance trench technology for extremely low RDS(ON). Applications DC/DC converter Motor drives D D G S TO-252 S TA=25oC unless otherwise noted G Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Parameter Ratings 30 ±20 (Note 1) (Note 1a) Units V V A Maximum Drain Current - Continuous Maximum Drain Current - Pulsed 56 14 100 60 2.8 1.3 -55 to +150 PD Maximum Power Dissipation @ T C = 25oC T A = 25oC T A = 25oC (Note 1) (Note 1a) (Note 1b) W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 2.1 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD6680A 2000 Fairchild Semiconductor Corporation Device FDD6680A Reel Size 13’’ Tape width 16mm Quantity 2500 FDD6680A, Rev. C FDD6680A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted ...