null30V N-Channel PowerTrench MOSFET
FDD6672A
May 2000 PRELIMINARY
FDD6672A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has...
Description
FDD6672A
May 2000 PRELIMINARY
FDD6672A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
65 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 10 V High performance trench technology for extremely low RDS(ON) Low gate charge (33 nC typical) High power and current handling capability
Applications
DC/DC converter
D
D G S TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA =25 oC unless otherwise noted
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
65 100 70 3.2 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25 °C @ TA = 25° C @ TA = 25° C
(Note 1) (Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJ A Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1b)
1.8 96
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6672A Device FDD6672A Reel Size 13’’ Tape width 16mm Quantity 2500 units
© 2000 Fairchild Semiconductor Corporation
FDD6672A Rev B(W)
FDD6672A
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆ TJ IDSS IGSSF IGSSR
T A = 25°C unless otherwise noted
Para...
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