20V N-Channel PowerTrench MOSFET
FDD6512A/FDU6512A
November 2001
FDD6512A/FDU6512A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel...
Description
FDD6512A/FDU6512A
November 2001
FDD6512A/FDU6512A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.
Features
36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V Low gate charge (12 nC typical) Fast switching High performance trench technology for extremely low RDS(ON)
Applications
DC/DC converter Motor drives
D
D G S
I-PAK (TO-251AA) G D S
G
D-PAK TO-252 (TO-252)
S
o
Absolute Maximum Ratings
Symbol
VDSS VGSS ID
TA=25 C unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA=25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
20 ± 12 36 10.7 100 43 3.8 1.6 –55 to +175
Units
V V A
PD
Power Dissipation
@TC=25°C @TA=25°C @TA=25°C
W
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
3.5 40 96
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDD6512A FDU6512A Device FDD6512A FDU6512A Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ ...
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