FDD6296

FDD6296/FDU6296 March 2015 FDD6296/FDU6296 30V N-Channel Fast Switching PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications DC/DC converter Power management Features 50A, 30 V RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V Low gate charge Fast switching High performance trench technology for extremely low RDS(ON) D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C (Note 3) @TA=25°C (Note 1a) Pulsed (Note 1a) Power Dissipation @TC=25°C (Note 3) @TA=25°C (Note 1a) @TA=25°C (Note 1b) Operating and Storage Junction Temperature Range Ratings 30 ± 20 50 15 100 52 3.8 1.6 –55 to +175 Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.9 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6296 FDD6296 D-PAK (TO-252) 13’’ FDU6296 FDU2696 I-PAK (TO-251) Tube Tape width 16mm N/A Units V A W °C °C/W Quantity 2500 un...