FDD5670

FDD5670 March 1999 ADVANCE INFORMATION FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD Drain-Source Voltage TC=25oC unless otherwise noted Parameter Ratings 60 ±20 Units V V A -Continuous -Pulsed (Note 1) (Note 1a) 48 10 100 70 2.8 1.3 -55 to +150 Maximum Power Dissipation @ T C = 25oC T A = 25oC T A = 25oC (Note 1) (Note 1a) (Note 1b) W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) 1.8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD5670 ©1999 Fairchild Semiconductor Corporation Device FDD5670 Reel Size 13’’ ...