60V N-Channel PowerTrench MOSFET
FDD5612
July 1999 ADVANCE INFORMATION
FDD5612
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MO...
Description
FDD5612
July 1999 ADVANCE INFORMATION
FDD5612
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.
Features
19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V.
Optimized for use in
Low gate charge. Very fast switching.
high frequency DC/DC converters.
Applications
DC/DC converter Motor drives
D
D G S
TO-252
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed
o
G
S
T C =25 C unless otherwise noted
o
Parameter
Ratings
60 ± 20
(Note 1) (Note 1a)
Units
V V A
19 6 100 36 3.2 1.3 -55 to +150
Maximum Power Dissipation @ T C = 25 C T A = 25 C T A = 25 C
o o
(Note 1) (Note 1a) (Note 1b)
W
T J, T stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R θJA R θJC Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
3.5 40 96
° C/W ° C/W
Package Marking and Ordering Information
Device Marking FDD5612
1999 Fairchild Semic...
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