FDD3680

FDD3680 February 2001 FDD3680 100V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 25 A, 100 V. RDS(ON) = 46 mΩ @ V GS = 10 V RDS(ON) = 51 mΩ @ V GS = 6 V Low gate charge (38 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current – Continuous – Pulsed T A=25oC unless otherwise noted Parameter Ratings 100 (Note 1) Units V V A W ±20 25 100 68 3.8 1.6 –55 to +175 Maximum Power Dissipation (Note 1) (Note 1a) (Note 1b) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 2.2 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD3680 Device FDD3680 Reel Size 13’’ Tape width 16mm Quantity 2500 units © 2001 Fairchild Semiconductor...