FDD3570

FDD3570 February 2000 PRELIMINARY FDD3570 80V N-Channel PowerTrench MOSFET General Description This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency. Features 10 A, 80 V. RDS(ON) = 0.019 Ω @ VGS = 10 V RDS(ON) = 0.022 Ω @ VGS = 6 V. Fast switching speed. High performance trench technology for extremely low RDS(ON) . High power and current handling capability. D G S TO-252 D G S Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous Maximum Drain Current – Pulsed (Note 1) (Note 1a) Ratings 80 ± 20 43 10 110 (Note 1) (Note 1a) (Note 1b) Units V V A PD Maximum Power Dissipation @TC = 25oC TA = 25 C TA = 25oC o 69 3.4 1.3 -55 to +150 W TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1a) (Note 1b) 1.8 37 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD3570 Device FDD3570 Reel Size 13’’ Tape width 16mm Quantity 2500 2000 Fairchild Semiconductor Corporation F...