FDD2570

FDD2570 February 2001 FDD2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 4.7 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability. D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 150 ±20 (Note 1a) Units V V A W 4.7 30 70 3.2 1.3 -55 to +150 Maximum Power Dissipation @ TC = 25°C @ TA = 25°C @ TA = 25°C (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 1.8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD2570 Device FDD2570 Reel Size 13’’ Tape width 16mm Quantity 2500 units 2001 Fairchild Se...