Document
FDD10AN06A0
August 2002
FDD10AN06A0
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ
Features
• r DS(ON) = 9.4mΩ (Typ.), V GS = 10V, ID = 50A • Qg(tot) = 28nC (Typ.), VGS = 10V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
Formerly developmental type 82560
Applications
• Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems
DRAIN (FLANGE) GATE SOURCE
D
G S
TO-252AA
FDD SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 115oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 52oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 50 11 Figure 4 429 135 0.9 -55 to 175 A A A mJ W W/oC
o
Ratings 60 ±20
Units V V
C
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 1.11 100 52
o o o
C/W C/W C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A
FDD10AN06A0
Package Marking and Ordering Information
Device Marking FDD10AN06A0 Device FDD10AN06A0 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA
On Characteristics
VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 50A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 25A, VGS = 6V ID = 50A, VGS = 10V, TJ = 175oC 2 0.015 0.020 4 0.027 0.023 V Ω 0.0094 0.0105
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 50A Ig = 1.0mA 1840 340 110 28 3.5 9.8 6.4 7.8 37 4.6 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 50A VGS = 10V, RGS = 10Ω 8 79 32 32 131 97 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 50A ISD = 25A ISD = 50A, dISD/dt = 100A/µs ISD = 50A, dISD/dt = 100A/µs 1.25 1.0 27 23 V V ns nC
Notes: 1: Starting TJ = 25°C, L = 8.58mH, IAS = 10A.
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A
FDD10AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
1.2 80 CURRENT LIMITED BY PACKAGE POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 60
0.8
0.6
40
0.4
20
0.2
0 TC , CASE TEMPERATURE (oC)
0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Ambient Temperature
2 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01
Figure 2. Maximum Continuous Drain Current vs Case Temperature
ZθJC, NORMALIZED THERMAL IMPEDANCE
PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-3 10-2 t , RECTANGULAR PULSE DURATION (s) 10-1 100 101
SINGLE PULSE 0.01 10-5 10-4
Figure 3. Normalized Maximum Transient Thermal Impedance
1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 VGS = 10V 175 - TC 150
IDM, PEAK CURRENT (A)
100
40 10-5 10-4 10-3 10-2 t , PULSE WIDTH (s) 10 -1 100 101
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
FDD10AN06A0 Rev. A
FDD10AN06A0
Typical Characteristics TC = 25°C unless otherwise noted
500 10µs 100 ID, DRAIN CURRENT (A) 100µs IAS, AVALANCHE CURRENT (A) 100 500 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC
1ms 10ms
STARTING TJ = 25o C
10
1 SINGLE PULSE TJ = MAX RATED T.