FDC697P

FDC697P January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. Features –8 A, –20 V RDS(ON) = 20 mΩ @ VGS = –4.5 V RDS(ON) = 25 mΩ @ VGS = –2.5 V RDS(ON) = 35 mΩ @ VGS = –1.8 V Applications Battery management Load Switch Battery protection High performance trench technology for extremely low RDS(ON) Fast switching speed FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size G S S S SuperSOT-6 TM 1 S 6 5 Bottom Drain 2 3 4 S FLMP Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –8 –40 2 1.5 –55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) 60 111 0.5 °C/W Package Marking and Ordering Information Device Marking .697 Device FDC697P Reel Size 7’’ Tape width 8mm Quantity 3000 units 2004 Fairchild Semiconductor Corporation FDC697P Rev C2 (W) FDC697P Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Drain...