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FDC6401N Dataheets PDF



Part Number FDC6401N
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual N-Channel 2.5V Specified PowerTrench MOSFET
Datasheet FDC6401N DatasheetFDC6401N Datasheet (PDF)

FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trenc.

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FDC6401N October 2001 FDC6401N Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Battery Protection • Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W 3.0 12 0.96 0.9 0.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W Package Marking and Ordering Information Device Marking .401 Device FDC6401N Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDC6401N Rev C (W) FDC6401N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µ A Min 20 Typ Max Units V Off Characteristics ID = 250 µ A, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µ A 13 1 –100 100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, 0.5 0.9 –3 50 66 71 1.5 V mV/°C ID = 250 µ A, Referenced to 25°C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5V, ID = 3.0 A 70 95 106 mΩ ID(on) gFS 12 10 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V, 324 82 42 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 7 13 1.6 10 14 23 3 4.6 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 3.0 A, 3.3 0.95 0.7 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–So.


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