Document
FDC6401N
October 2001
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability
Applications
• DC/DC converter • Battery Protection • Power Management
D2 S1 D1
4 5
G2
3 2 1
SuperSOT
TM
-6
S2 G1
TA=25 C unless otherwise noted
o
6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W
3.0 12 0.96 0.9 0.7 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
130 60
°C/W °C/W
Package Marking and Ordering Information
Device Marking .401 Device FDC6401N Reel Size 7’’ Tape width 8mm Quantity 3000 units
©2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)
FDC6401N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µ A
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 µ A, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µ A 13 1 –100 100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
VDS = VGS,
0.5
0.9 –3 50 66 71
1.5
V mV/°C
ID = 250 µ A, Referenced to 25°C VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 5V, ID = 3.0 A
70 95 106
mΩ
ID(on) gFS
12 10
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
324 82 42
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
5 7 13 1.6
10 14 23 3 4.6
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 3.0 A,
3.3 0.95 0.7
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain–So.