FDC638P

June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 pin 1 8 2 G D D 5 SuperSOT TM -6 3 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain-Source Voltage TA = 25°C unless otherwise note Ratings -20 ±8 (Note 1a) Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed -4.5 -20 PD Maximum Power Dissipation (Note 1a) (Note 1b) 1.6 0.8 -55 to 150 W TJ ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS R θ JA R θ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W ©1999 Fairchild Semiconductor FDC638P Rev.D ELECTRICAL CHARACTERISTICS Symbol Parameter ...