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FDC6330L

Fairchild Semiconductor

Integrated Load Switch

FDC6330L February 1999 FDC6330L Integrated Load Switch General Description This device is particularly suited for comp...


Fairchild Semiconductor

FDC6330L

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Description
FDC6330L February 1999 FDC6330L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOTTM-6 package. Features V DROP DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L (ON) = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω. IN L (ON) Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6kV Human Body Model). High performance PowerTrenchTM technology for extremely low on-resistance. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. Applications Power management Load actuation Vin,R1 4 Q2 3 Vout,C1 EQUIVALENT CIRCUIT ON/OFF 5 Q1 2 Vout,C1 IN VDR OP + - OUT R1,C1 6 See Application Circuit 1 R2 ON/OFF SuperSOT -6 Absolute Maximum Ratings Symbol V IN V ON/OFF ID PD T J , T stg ESD Input Voltage Range On/Off Voltage Range Load Current - Continuous - Pulsed Maximum Power Dissipation o TM T A =25 C unless otherwise noted Parameter (Note 1) Ratings 3 - 20 1.5 - 8 (Note 2) Units V V A W °C kV 2.3 10 0.7 -55 to +150 6 (Note 1) Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human-Body-Model (100pf/1500 Ohm) Thermal Characteristics R θ JA R θ JC Thermal Resistance, Junction-...




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