FDC6318P

FDC6318P December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Features –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V RDS(ON) = 125 mΩ @ VGS = –2.5 V RDS(ON) = 200 mΩ @ VGS = –1.8 V High performance trench technology for extremely low RDS(ON) SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) Applications Power management Load switch S1 D1 D2 4 5 G2 3 2 1 SuperSOT TM -6 G1 S2 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1a) Units V V A W –2.5 –7 0.96 0.9 0.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W Package Marking and Ordering Information Device Marking .318 Device FDC6318P Reel Size 13’’ Tape width 12mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation FDC6318P Rev D (W) FDC6318P Electrical Characteristics Symb...