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FDC6312P

Fairchild Semiconductor
Part Number FDC6312P
Manufacturer Fairchild Semiconductor
Description Dual P-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDC6312P January 2001 FDC6312P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description These P-Channel 1...
Datasheet PDF File FDC6312P PDF File

FDC6312P
FDC6312P

Overview
FDC6312P January 2001 FDC6312P Dual P-Channel 1.
8V PowerTrench Specified MOSFET General Description These P-Channel 1.
8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features • –2.
3 A, –20 V.
RDS(ON) = 115 mΩ @ VGS = –4.
5 V RDS(ON) = 155 mΩ @ VGS = –2.
5 V RDS(ON) = 225 mΩ @ VGS = –1.
8 V • High performance trench technology for extremely low RDS(ON) • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick) Applications • Power management • Load switch D2 S1 D1 4 5 G2 ...


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