P-Channel MOSFET
FDC604P
January 2001
FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V spe...
Description
FDC604P
January 2001
FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.
Applications
Battery management Load switch Battery protection
Features
–5.5 A, –20 V.
RDS(ON) = 33 mΩ @ VGS = –4.5 V RDS(ON) = 43 mΩ @ VGS = –2.5 V RDS(ON) = 60 mΩ @ VGS = –1.8 V
Fast switching speed.
High performance trench technology for extremely low RDS(ON)
S D D
SuperSOT TM-6
G D D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.604
FDC604P
7’’
Ratings
–20 ±8 –5.5 –20 1.6 0.8 –55 to +150
78 30
Tape width 8mm
Units
V V A
W
°C
°C/W °C/W
Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDC604P Rev C (W)
FDC604P
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS ∆TJ
IDSS
Breakdown Voltage Tempe...
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