FDB6644

FDP6644/FDB6644 June 2001 FDP6644/FDB6644 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A A W W/°C °C 50 150 83 0.55 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6644 FDP6644 Device FDB6644 FDP6644 Reel Size 13’’ Tube Tape width 24mm n/a Qua...