N-Channel MOSFET
FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
This N...
Description
FDP6030BL/FDB6030BL
July 2000
FDP6030BL/FDB6030BL
N-Channel Logic Level PowerTrench MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating.
D
D
G
G D S
TO-220
FDP Series
G S
TC = 25°C unless otherwise noted
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG RθJC RθJA Drain-Source Voltage Gate-Source Voltage Maximum Drain Current
Parameter
FDP6030BL
FDB6030BL
30 ±20 40 120 60 0.36
Units
V V A W W/°C °C °C/W °C/W
- Continuous - Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
-65 to +175
Thermal Characteristics
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.5 62.5
Package Marking and Ordering Information
Device Mark...
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