FDB5645

FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 80 A, 60 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.011 Ω @ VGS = 6 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating. D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG TL Drain-Source Voltage Gate-Source Voltage Maximum Drain Current TA =25oC unless otherwise noted Parameter – Continuous (note 3) – Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead termperature for soldering purposes, 1/8“ from case for 5 seconds FDP5645 FDB5645 Units V V A W W/°C °C °C 60 ±20 80 300 125 0.83 -65 to +175 +275 Thermal Characteristics Rθ J C Rθ JA Therma...