DatasheetsPDF.com

FDB42AN15A0

Fairchild Semiconductor

N-Channel MOSFET

FDP42AN15A0 / FDB42AN15A0 September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ Featu...


Fairchild Semiconductor

FDB42AN15A0

File Download Download FDB42AN15A0 Datasheet


Description
FDP42AN15A0 / FDB42AN15A0 September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ Features r DS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A Qg(tot) = 33nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 82864 Applications DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems DRAIN (FLANGE) GATE SOURCE DRAIN GATE DRAIN (FLANGE) D SOURCE G S TO-263AB FDB SERIES TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 24 5 Figure 4 90 150 1.00 -55 to 175 A A mJ W W/oC o Ratings 150 ±20 Units V V A C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43 oC/W o o C/W C/W This product h...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)