N-Channel MOSFET
FDP42AN15A0 / FDB42AN15A0
September 2002
FDP42AN15A0 / FDB42AN15A0
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ
Featu...
Description
FDP42AN15A0 / FDB42AN15A0
September 2002
FDP42AN15A0 / FDB42AN15A0
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ
Features
r DS(ON) = 36mΩ (Typ.), VGS = 10V, ID = 12A Qg(tot) = 33nC (Typ.), VGS = 10V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101
Formerly developmental type 82864
Applications
DC/DC Converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 24V and 48V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42V Automotive Load Control Electronic Valve Train Systems
DRAIN (FLANGE) GATE SOURCE DRAIN GATE DRAIN (FLANGE)
D
SOURCE
G S
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 24 5 Figure 4 90 150 1.00 -55 to 175 A A mJ W W/oC
o
Ratings 150 ±20
Units V V A
C
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 1.0 62 43
oC/W o o
C/W C/W
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