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FDB2572 Dataheets PDF



Part Number FDB2572
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDB2572 DatasheetFDB2572 Datasheet (PDF)

FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82860 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous.

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FDB2572 / FDP2572 September 2002 FDB2572 / FDP2572 N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ Features • r DS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82860 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems DRAIN (FLANGE) GATE SOURCE D SOURCE DRAIN GATE DRAIN (FLANGE) G TO-220AB FDP SERIES TO-263AB FDB SERIES S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 43oC/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 29 20 4 Figure 4 36 135 0.9 -55 to 175 A A A A mJ W W/oC o Ratings 150 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220,TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 2 1.11 62 43 o o o C/W C/W C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 Fairchild Semiconductor Corporation FDB2572 / FDP2572 Rev. B FDB2572 / FDP2572 Package Marking and Ordering Information Device Marking FDB2572 FDP2572 Device FDB2572 FDP2572 Package TO-263AB TO-220AB Reel Size 330mm Tube Tape Width 24mm N/A Quantity 800 units 50 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 120V VGS = 0V VGS = ±20V TC = 150o 150 1 250 ±100 V µA nA On Characteristics VGS(TH) rDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance V GS = VDS, ID = 250µA ID=9A, VGS=10V ID = 4A, VGS = 6V, ID=9A, VGS=10V, TC=175oC 2 0.045 0.050 0.126 4 0.054 0.075 0.146 Ω V Dynamic Characteristics CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Dra.


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