N-Channel MOSFET
FDP2570/FDB2570
August 2001
FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSF...
Description
FDP2570/FDB2570
August 2001
FDP2570/FDB2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
Low gate charge (40nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
150 ± 20
(Note 1) (Note 1)
Units
V V A A W W°/C °C
22 50 93 0.63 –65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W
Package Marking and Ordering Information
Device Marking FDB2570 FDP2570 Device FDB2570 F...
Similar Datasheet