FDB15N50

FDB15N50 — N-Channel UniFETTM MOSFET FDB15N50 N-Channel UniFETTM MOSFET 500 V, 15 A, 380 mΩ November 2013 Features Low gate charge Qg results in simple drive requirement (Typ. 33 nC) Improved Gate, avalanche and high reapplied dv/dt ruggedness Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A) Reduced Miller capacitance and low Input capacitance (Typ. Crss = 16 pF) Improved switching speed with low EMI 175oC rated junction temperature Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Applications Lighting Uninterruptible Power Supply AC-DC Power Supply D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds (Note 1) FDB15N50 500 ±30 15 11 60 300 2 -55 to 175 300 (1.6mm from case) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resist...