Diode
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FH-56
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
FD1000FH-56
OUTLIN...
Description
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FH-56
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
FD1000FH-56
OUTLINE DRAWING
Dimensions in mm
R4
5
9
15°
‘38
CATHODE φ 50 0.4 MIN
q IF(AV) Average forward current ......................1000A q VRRM Repetitive peak reverse voltage ....... 2500V, 2800V q QRR Reverse recovery charge ................. 1000µC q Press pack type
φ 50 φ 92 MAX
ANODE
M5 × 0.8 DEPTH 2.5
APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t Tj Tstg — — Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Junction temperature Storage temperature Mounting force required Weight Voltage class 50 2500 2800 2000 Conditions f = 60Hz, sine wave θ = 180°, Tf = 79°C One half cycle at 60Hz, non-repetitive One cycle at 60Hz 56 2800 3100 2240 Ratings 1570 1000 25 2.6 × 105 –40 ~ +125 –40 ~ +150 26.5 ~ 35.3 Unit V V V Unit A A kA A 2s °C °C kN g
Recommended value 29.4 Standard value
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM QRR Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Thermal resistance Test conditions Tj = 125°C, VRRM Applied Tj = 125°C, IFM = 2500A, Instantaneous measurement IFM = 1000A, diF/dt = –30A/µs, VR = 150V, Tj = 12...
Similar Datasheet
- FD1000FH-56 Diode - Mitsubishi Electric Semiconductor