600V N-Channel MOSFET
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
SuperFET
FCP7N60 / FCPF7N60
600V N-Channel MOSFET Features
• 650V @TJ = 150°C ...
Description
FCP7N60 / FCPF7N60 600V N-Channel MOSFET
SuperFET
FCP7N60 / FCPF7N60
600V N-Channel MOSFET Features
650V @TJ = 150°C Typ. RDS(on) = 0.53Ω Ultra low gate charge (typ. Qg = 25nC) Low effective output capacitance (typ. Coss.eff = 60pF) 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
D
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G! G DS
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TO-220
GD S
TO-220F
!
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FCP7N60
600 7 4.4 21
FCPF7N60
7* 4.4* 21* ± 30 230 7 8.3 4.5
Unit
V A A A V mJ A mJ V/ns
83 0.67 -55 to +150 300
31 0.25
W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature ...
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