FC810

Ordering number :EN4516A FC810 Silicon Barrier Diode 15V, 700mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC810 is formed with two chips, each being equivalent to the SB07-015C, placed in one package. Package Dimensions unit:mm 1236A [FC810] 1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C (Value per element) Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 15 17 700 5 –55 to +125 –55 to +125 Unit V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C (Value per element) Parameter Reverse Voltage Forward Voltage Reverse Current Interteminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth (j-a) IR=150µA IF=700mA VR=7.5V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit 560 Conditions Ratings min 15 0.55 20 20 10 typ max Unit V V µA pF ns ˚C/W · Marking:810 trr Test Circuit Electrical Connection 1:Cathode 2:Cathode 3:Anode 4:No Contact 5:Anode SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/90696GI...