FC803

Ordering number :EN3193A FC803 Silicon Schottky Barrier Diode 30V, 70mA Rectifier Features · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each being equivalent to the SB007W03C, placed in one package. Package Dimensions unit:mm 1233A [FC803] 1:Anode 2:Anode 3:Cathode 4:Anode 5:Anode 6:Cathode SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50MHz sine wave, 1 cycle Conditions Ratings Unit 30 35 70 2 –55 to +125 –55 to +125 V V mA A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interteminal Capacitance Reverse Recovery Time Symbol VR VF IR C trr IR=20µA IF=70mA VR=15V VR=10V, f=1MHz IF=IR= (–) 10mA, See specified Test Circuit 3.0 10 Conditions Ratings min 30 0.55 5 Unit max V V µA pF ns typ Note) The specifications shown above are for each individual diode. · Marking:803 trr Test Circuit Electrical Connection SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2 F...