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FC139 Dataheets PDF



Part Number FC139
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Transistor
Datasheet FC139 DatasheetFC139 Datasheet (PDF)

Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · High VEBO (VEBO≥15V) · Excellent in thermal equilibrium .

  FC139   FC139


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Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · High VEBO (VEBO≥15V) · Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067 [FC139] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1 unit Conditions Ratings 60 50 15 100 200 20 200 300 150 –55 to +150 Unit V V V mA mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE hFE(small/ large) fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=10V, IC=10mA VCB=10V, f=1MHz IC=50mA, IB=1mA IC=50mA, IB=1mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 60 50 15 800 0.8 1500 0.98 200 1.5 0.1 0.8 0.5 1.1 MHz pF V V V V V Conditons Ratings min typ max 0.1 0.1 3200 Unit µA µA Note:The specifications shown above are for each individual transistor. Marking:139 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/2080MO, TS No.3324-1/3 FC139 No.3324-2/3 FC139 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3324-3/3 .


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