FC123

Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC123 is formed with two chips, being equivalent to the 2SA1508, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection Package Dimensions unit:mm 2067 [FC123] E1:Emitter 1 B1:Base 1 C2:Collcector 2 E2:Emitter 2 B2:Base 2 C1:Collcetor 1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Peak Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings –50 –50 –5 –100 –200 200 300 150 –55 to +150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Symbol ICBO IEBO hFE fT Cob VCB=–40V, IE=0 VEB=–5V, IC=0 VCE=–5V, IC=–10mA VCE=–10V, IC=–5mA VCB=–10V, f=1MHz –50 –50 –0.4 –0.8 33 –0.55 –2.0 47 –0.8 –4.0 61 100 200 5.1 –0.1 –0.3 MHz pF V V V V V k...