FC119

Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC119 is formed with two chips, being equivalent to the 2SC2814, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2068 [FC119] Electrical Connection E1:Emitter1 E2:Emitter2 B2:Base2 C2:Collerctor2 B1:Base1 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg 1 unit Conditions Ratings 30 20 5 30 200 300 150 –55 to+150 Unit V V V mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base to Emitter Voltage Drop Gain-Bandwidth Product Reverse Transfer Capacitance Base to Collector Time Constant Noise Figure Power Gain Symbol ICBO IEBO hFE VCB=10V, IE=0 VEB=4V, IC=0 80 0.8 0.98 1.0 200 320 0.95 3.0 25 1.2 20 15 mV MHz pF ps dB dB Conditions Ratings min typ max 0.1 0.1 200 Unit µA µA VCE=6V, IC=1mA hFE(small/- VCE=6V, IC=1mA large) VBE(large VCE=6V, IC=1mA -small) fT Cre rbb'cc NF PG VCE=6V, IC=1mA VCE=6V,...