FC117

Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. · Low collector to emitter saturation voltage. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2067 [FC117] Electrical Connection E1:Emitter1 B1:Base1 C2:Collerctor2 E2:Emitter2 B2:Base2 C1:Collector1 SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP IB PC PT Tj Tstg 1 unit Conditions Ratings –20 –15 –5 –500 –1 –100 200 300 150 –55 to+150 Unit V V V mA A mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbol ICBO IEBO hFE(1) hFE(2) hFE(small/ large) fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) VCB=–15V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–10mA VCE=–2V, IC=–400mA VCE=–2V, IC=–10...