FC116

Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features · On-chip bias resistors (R1=10kΩ, R2=10kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC116 is formed with two chips, being equivalent to the 2SC3398, placed in one package. · Excellent in thermal equilibrium and pair capability. Package Dimensions unit:mm 2066 [FC116] Electrical Connection C1:Collector1 C2:Collerctor2 B2:Base2 EC:Emitter Common B1:Base1 SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC I CP PC PT Tj Tstg 1 unit Conditions Ratings 50 50 10 100 200 200 300 150 –55 to+150 Unit V V V mA mA mW mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage Input OFF-State Voltage Input ON-State Voltage Input Resistance Resistance Ratio Symbol ICBO ICEO IEBO hFE fT Co b VCB=40V, IE=0 VCE=40V, IB=0 VEB=5V, IC=0 VCE=5V, IC=10mA VCE=10V, IC=5mA VCB=10V, f=1MHz 50 50 0.8 1.0 7.0 0.9 1.1 2.0 10 1.0 1.5 4.0 13 1.1 170 50 250 3.3 0....