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FBR3504

EIC discrete Semiconductors

FAST RECOVERY BRIDGE RECTIFIERS

FBR3500 - FBR3510 PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * * * * * * High case dielectric strength High surge ...


EIC discrete Semiconductors

FBR3504

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Description
FBR3500 - FBR3510 PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY BRIDGE RECTIFIERS BR50 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40) MECHANICAL DATA : * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 °C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. M...




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