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FM840

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM820 THRU FM840 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012...


Formosa MS

FM840

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Description
Chip Schottky Barrier Diodes FM820 THRU FM840 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = Reverse current Thermal resistance Diode junction capacitance Storage temperature 25o C IR 50 Rq JA CJ TSTG -55 55 700 +150 o CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 8.0 150 5.0 UNIT A A mA mA C / w pF o VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage C SYMBOLS MARKING CODE SK82 SK83 SK84 V RRM *1 V RMS *2 VR *3 VF *4 Operating temperature (o C) (V) FM820 FM830 FM840 20 30 40 (V) 14 21 28 (V) 20 30 40 (V) *1 Repetitive peak reverse voltage *2 RMS volta...




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